VERY LOW CURRENT THRESHOLD GAAS/AL0.5GA0.5AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY

被引：25

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 08期

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D O I：

10.1063/1.96490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：511 / 513

页数：3

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[7] CHEMICAL BEAM EPITAXY OF INGAAS
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[8] VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 11 - 14
[9] INFLUENCE OF BULK NONRADIATIVE RECOMBINATION IN WIDE BAND-GAP REGIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS-ALXGA1-XAS DH LASERS
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[10] CHEMICAL BEAM EPITAXY OF INP AND GAAS
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1234 - 1236