INFLUENCE OF BULK NONRADIATIVE RECOMBINATION IN WIDE BAND-GAP REGIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS-ALXGA1-XAS DH LASERS

被引：65

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 03期

关键词：

D O I：

10.1063/1.90314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：245 / 248

页数：4

共 21 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J].

CASEY, HC ;

CHO, AY ;

BARNES, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :467-470

[3]

CASEY HW, UNPUBLISHED

[4]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DIXON, RW ;

CASEY, HC ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :501-503

[6] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[7] OPTICAL INVESTIGATION OF STRESS IN CENTRAL GAAS LAYER OF MOLECULAR-BEAM-GROWN ALXGA1-XAS-GAAS-ALXGA1-XAS STRUCTURES [J].

DINGLE, R ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4312-4315

[8] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

DYMENT, JC ;

NASH, FR ;

HWANG, CJ ;

ROZGONYI, GA ;

HARTMAN, RL ;

MARCOS, HM ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[9]

ILLEGEMS M, 1977, J APPL PHYS, V48, P1278

[10] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

GOSSARD, AC ;

ILEGEMS, M ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

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