OPTICAL INVESTIGATION OF STRESS IN CENTRAL GAAS LAYER OF MOLECULAR-BEAM-GROWN ALXGA1-XAS-GAAS-ALXGA1-XAS STRUCTURES

被引：18

作者：

DINGLE, R ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.321453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4312 / 4315

页数：4

共 34 条

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[2]

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[4]

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[6] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[7]

DEOACH BC, 1974, IEEE J QUANTUM ELECT, V10, P709

[8] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

DINGLE, R ;

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HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[9]

DINGLE R, UNPUBLISHED

[10] THERMAL EXPANSION OF ALAS [J].

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PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+

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