LATERAL STRUCTURING OF SILICON THIN-FILMS BY INTERFERENCE CRYSTALLIZATION

被引：47

作者：

HEINTZE, M

SANTOS, PV

NEBEL, CE

STUTZMANN, M

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laterally structured microcrystalline silicon in the submicron range has been produced from amorphous silicon thin films by transient holography using a high-energy pulse laser. The energy density along the lines of the transient optical grid is sufficient to induce crystallization at the intensity maxima. Large area laterally structured microcrystalline silicon has been produced by selectively etching the amorphous phase with simultaneous growth of muc-Si:H in a hydrogen-silane plasma.

引用

页码：3148 / 3150

页数：3

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