HIGH-PRESSURE VAPOR-PHASE EPITAXY OF GAN

被引：11

作者：

GILLESSEN, K ^{[1
]}

SCHULLER, KH ^{[1
]}

STRUCK, B ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCHUNGSINST,FRANKFURT,FED REP GER

来源：

MATERIALS RESEARCH BULLETIN | 1977年 / 12卷 / 10期

关键词：

D O I：

10.1016/0025-5408(77)90018-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：955 / 960

页数：6

共 17 条

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BAN, VS .

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EJDER, E .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (01) :44-46

[4] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].

ILEGEMS, M ;

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ILEGEMS, M ;

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4234-4235

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BOIS, D .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :412-414

[7] HETEROEPITAXIAL THERMAL GRADIENT SOLUTION GROWTH OF GAN [J].

LOGAN, RA ;

THURMOND, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1727-&

[8] HIGH-PRESSURE SOLUTION GROWTH OF GAN+ [J].

MADAR, R ;

JACOB, G ;

HALLAIS, J ;

FRUCHART, R .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :197-203

[9] VIOLET LUMINESCENCE OF MG-DOPED GAN [J].

MARUSKA, HP ;

STEVENSON, DA ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :303-305

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

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