GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses; with a focal length of 44 mum and a root mean square roughness of similar to1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional. broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters. (C) 2004 American Institute of Physics.