Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

被引：127

作者：

Shen, YC ^{[1
]}

Wierer, JJ ^{[1
]}

Krames, MR ^{[1
]}

Ludowise, MJ ^{[1
]}

Misra, MS ^{[1
]}

Ahmed, F ^{[1
]}

Kim, AY ^{[1
]}

Mueller, GO ^{[1
]}

Bhat, JC ^{[1
]}

Stockman, SA ^{[1
]}

Martin, PS ^{[1
]}

机构：

[1] Lumileds Lighting LLC, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1566098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical cavity effects have a significant influence on the extraction efficiency of InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes (FCLEDs). Light emitted from the quantum well (QW) self-interferes due to reflection from a closely placed reflective metallic mirror. The interference patterns couple into the escape cone for light extraction from the FCLED. This effect causes significant changes in the extraction efficiency as the distance between the QW and the metallic mirror varies. In addition, the radiative lifetime of the QW also changes as a function of the distance between the QW and the mirror surface. Experimental results from packaged FCLEDs, supported by optical modeling, show that a QW placed at an optimum distance from the mirror provides a similar to2.3x increase in total light output as compared to a QW placed at a neighboring position corresponding to a minimum in overall light extraction. (C) 2003 American Institute of Physics.

引用

页码：2221 / 2223

页数：3

共 16 条

[1] Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends [J].