Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure

被引:169
作者
Deguchi, T
Sekiguchi, K
Nakamura, A
Sota, T
Matsuo, R
Chichibu, S
Nakamura, S
机构
[1] Waseda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Rigaku Corp, Xray Res Lab, Tokyo 1968666, Japan
[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[4] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7448601, Japan
[5] Waseda Univ, Grad Sch Sci & Engn, Mat Res Lab Biosci & Photon, Shinjuku Ku, Tokyo 1698555, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 8B期
关键词
GaN; AlGaN; internal electric field; QCSE;
D O I
10.1143/JJAP.38.L914
中图分类号
O59 [应用物理学];
学科分类号
摘要
Excitonic absorption was observed in a transmittance spectrum of AlGaN/GaN/AlGaN single quantum well structure with a well width of 5 nm at room temperature. The total internal electric field strength in the well was about 0.73 MV/cm, which was estimated from the absorption peak position based on a simple calculation, neglecting excitons. The observation is clearly due to the quantum-confined Stark effect. While excitonic absorption was clearly observed even in such a high internal held, no light emission was detected under a He-Cd laser excitation at temperatures ranging from room temperature to T = 10 K. Light emission accompanied by a blue shift. of the emission peak and an increase of emission intensity was observed under higher excitation power density. The obvious conclusion in the present case is that the presence of a high internal electric field in the well is a disadvantage for light emission.
引用
收藏
页码:L914 / L916
页数:3
相关论文
共 17 条
[1]   Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].
Akasaki, I ;
Amano, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408
[2]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[3]   Excitonic emissions from hexagonal GaN epitaxial layers [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786
[4]   Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190
[5]  
Deguchi T., UNPUB
[6]   Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].
Im, JS ;
Kollmer, H ;
Off, J ;
Sohmer, A ;
Scholz, F ;
Hangleiter, A .
PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438
[7]   Piezoelectric effects on the optical properties of GaN/AlxGa1-xN multiple quantum wells [J].
Kim, HS ;
Lin, JY ;
Jiang, HX ;
Chow, WW ;
Botchkarev, A ;
Morkoç, H .
APPLIED PHYSICS LETTERS, 1998, 73 (23) :3426-3428
[8]  
Martin G, 1996, APPL PHYS LETT, V68, P2541, DOI 10.1063/1.116177
[9]   BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2173-2176
[10]   ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060