Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells

被引：591

作者：

Im, JS ^{[1
]}

Kollmer, H ^{[1
]}

Off, J ^{[1
]}

Sohmer, A ^{[1
]}

Scholz, F ^{[1
]}

Hangleiter, A ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, Pfaffenwaldring 57, D-70550 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.57.R9435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate a dramatic reduction of the oscillator strength in GaN/AlxGa1-xN quantum wells due to piezoelectric fields. Our study using time-resolved photoluminescence spectroscopy reveals a strong increase of the luminescence decay time of the dominating transition with increasing well width by several orders of magnitude in parallel to a redshift of the emission peaks. The experimental results are consistently explained by a quantitative model based on the piezoelectric fields in strained wurtzite quantum wells. We estimate the piezoelectric constant of GaN to d(31) = -0.9 X 10(-10) cm/V. [S0163-1829(98)52016-4].

引用

页码：R9435 / R9438

页数：4

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