Effective masses and valence-band splittings in GaN and AlN

被引:215
作者
Kim, K [1 ]
Lambrecht, WRL [1 ]
Segall, B [1 ]
vanSchilfgaarde, M [1 ]
机构
[1] SRI INT, MENLO PK, CA 94025 USA
关键词
D O I
10.1103/PhysRevB.56.7363
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Full-potential (FP) linearized muffin-tin orbital (LMTO) calculations within the local density approximation are used to determine the conduction and valence-baud effective mass tensors and the related Rashba-Sheka-Pikus and Kohn-Luttinger Hamiltonian parameters for wurtzite and zinc-blende GaN and ALN. Spin-orbit coupling effects are obtained from atomic-sphere approximation (ASA) LMTO calculations. The c-axis uniaxial strain dependence of the crystal field splitting is determined and the combined results are used to interpret experimental data on the strain dependence of exciton splittings in GaN. Corrections beyond the local density approximation on the effective masses and crystal-field splittings as well as the accuracy of the quasicubic model are discussed.
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收藏
页码:7363 / 7375
页数:13
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