k center dot p method for strained wurtzite semiconductors

被引:972
作者
Chuang, SL
Chang, CS
机构
[1] Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 04期
关键词
D O I
10.1103/PhysRevB.54.2491
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We derive the effective-mass Hamiltonian for wurtzite semiconductors, including the strain effects. This Hamiltonian provides a theoretical groundwork for calculating the electronic band structures and optical constants of bulk and quantum-well wurtzite semiconductors. We apply Kane's model to derive the band-edge energies and the optical momentum-matrix elements for strained wurtzite semiconductors. We then use the k . p perturbation method to derive the effective-mass Hamiltonian, which is then checked with that derived using an invariant method based on the Pikus-Bir model. We obtain the band structure A(i) parameters in the group theoretical model explicitly in terms of the momentum-matrix elements. We also find the proper definitions of the important physical quantities used in both models and present analytical expressions for the valence-band dispersions, the effective masses, and the interband optical-transition momentum-matrix elements near the band edges, taking into account the strain effects.
引用
收藏
页码:2491 / 2504
页数:14
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