Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated silicon

(103) fiber-textured SrBi2Nb2O9 thin films have been grown on Pt-coated Si substrates using a SrRuO3 buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) SrRuO3 grains on (111) Pt grains and in turn (103) SrBi2Nb2O9 grains on (111) SrRuO3 grains. The films exhibit remanent polarization values of 9 muC/cm(2). The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures. (C) 2002 American Institute of Physics.