Electronic structure at rubrene metal interfaces

被引：26

作者：

Ding, Huanjun ^{[1
]}

Gao, Yongli ^{[1
]}

机构：

[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 95卷 / 01期

关键词：

FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR INTERFACES; THIN-FILM; TRANSPORT; PENTACENE; ALIGNMENT; CRYSTALS; CALCIUM;

D O I：

10.1007/s00339-008-5038-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of the interfaces between rubrene and various metals, including Au, Ag, Al, and Ca, have been investigated with photoemission and inverse photoemission spectroscopy. The formation of the interface dipole is observed at all interfaces. The Fermi level shifts linearly within the band gap as a function of metal workfunction, until it is almost aligned with the lowest unoccupied molecular orbital (LUMO) by Ca. Strong interactions take place at the interface between rubrene and Ca, evidenced by the evolution of the valence features.

引用

页码：89 / 94

页数：6