Photoconductors for 200-400 mu m: Choices and challenges

被引：7

作者：

Haegel, NM

机构：

[1] Department of Physics, Fairfield University, Fairfield

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 377卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(96)00022-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Extrinsic silicon and germanium photoconductors are the most sensitive detectors of far infrared radiation. This paper surveys various options being considered to extend the wavelength coverage of extrinsic photoconductors beyond the current limit of 220 mu m. The benefits, current status, and potential limitations of Ge:Ga blocked impurity band detectors, GaAs extrinsic photoconductors and GaAs blocked impurity band detectors are reviewed.

引用

页码：501 / 507

页数：7

共 20 条

[1]

BRATT PR, 1977, SEMICONDUCT SEMIMET, V12, P41

[2] ADVANCED FAR-INFRARED DETECTORS [J].