ADVANCED FAR-INFRARED DETECTORS

被引：113

作者：

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

来源：

INFRARED PHYSICS & TECHNOLOGY | 1994年 / 35卷 / 2-3期

关键词：

D O I：

10.1016/1350-4495(94)90074-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Recent advances in photoconductive and bolometric semiconductor detectors for wavelengths 1 mm > lambda > 50 mum are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude (airplane and balloon based) and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge: Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide.

引用

页码：127 / 146

页数：20

共 64 条

[1] BOGGESS NW, 1979, NASA78598 AM RES CTR
[2] BRATT PR, 1977, SEMICONDUCTORS SEMIM, V12, pCH2
[3] INTERPRETATION OF ACCEPTOR EXCITATION-SPECTRA IN UNIAXIALLY STRESSED GERMANIUM
BROECKX, J
VENNIK, J
[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6165 - 6168
[4] EFFECT OF UNIAXIAL-STRESS ON SHALLOW ACCEPTOR STATES IN SILICON AND GERMANIUM
BUCZKO, R
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1987, 9 (06): : 669 - 689
[5] CUNNINGHAM CR, 1990, P SOC PHOTO-OPT INS, V1235, P515, DOI 10.1117/12.19115
[6] THEORETICAL-MODEL FOR HOLE CAPTURE AT ACCEPTORS IN GERMANIUM
DARKEN, LS
[J]. PHYSICAL REVIEW LETTERS, 1992, 69 (19) : 2839 - 2842
[7] GORNIK E, 1984, PHYSICA B & C, V127, P95, DOI 10.1016/S0378-4363(84)80015-7
[8] DEVELOPMENT OF HIGH-RESPONSIVITY GE-GA PHOTOCONDUCTORS
HAEGEL, NM
HUESCHEN, MR
HALLER, EE
[J]. INFRARED PHYSICS, 1985, 25 (1-2): : 273 - 276
[9] PERFORMANCE AND MATERIALS ASPECTS OF GE-BE PHOTOCONDUCTORS
HAEGEL, NM
HALLER, EE
LUKE, PN
[J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1983, 4 (06): : 945 - 954
[10] MODELING OF NEAR-CONTACT FIELD AND CARRIER DISTRIBUTIONS IN EXTRINSIC GERMANIUM PHOTOCONDUCTORS
HAEGEL, NM
WHITE, AM
[J]. INFRARED PHYSICS, 1989, 29 (05): : 915 - 923

← 1 2 3 4 5 6 7 →