DEVELOPMENT OF HIGH-RESPONSIVITY GE-GA PHOTOCONDUCTORS

被引：12

作者：

HAEGEL, NM

HUESCHEN, MR

HALLER, EE

机构：

来源：

INFRARED PHYSICS | 1985年 / 25卷 / 1-2期

关键词：

D O I：

10.1016/0020-0891(85)90090-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：273 / 276

页数：4

共 8 条

[1]

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[5]

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[6] IN-DIFFUSION AND ANNEALING OF COPPER IN GERMANIUM [J].

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[7] SPECTROSCOPY OF THE SOLID-STATE ANALOGS OF THE HYDROGEN-ATOM - DONORS AND ACCEPTORS IN SEMICONDUCTORS [J].

RAMDAS, AK ;

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REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (12) :1297-1387

[8]

SCLAR N, 1974, 1974 P IRIS DET SPEC, P247

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