PERFORMANCE AND MATERIALS ASPECTS OF GE-BE PHOTOCONDUCTORS

被引：19

作者：

HAEGEL, NM ^{[1
]}

HALLER, EE ^{[1
]}

LUKE, PN ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1983年 / 4卷 / 06期

关键词：

D O I：

10.1007/BF01009319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：945 / 954

页数：10

共 11 条

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[2]

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GONCHAROV LA, 1978, INORG MATER+, V14, P775

[8] GE-GA PHOTOCONDUCTORS IN LOW INFRARED BACKGROUNDS [J].

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APPLIED PHYSICS LETTERS, 1979, 34 (08) :495-497

[9] ZONE-REFINING HIGH-PURITY GERMANIUM [J].

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[10]

LOW FJ, 1981, SPIE, V280, P56

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