SHALLOW ACCEPTOR POPULATION AND FREE HOLE CONCENTRATION IN SI-IN AND SI-GA WITH IR-PHOTOEXCITATION

被引：17

作者：

GEIM, K ^{[1
]}

PENSL, G ^{[1
]}

SCHULZ, M ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-8520 ERLANGEN,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 27卷 / 02期

关键词：

D O I：

10.1007/BF00615808

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 78

页数：8

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