MODELING OF NEAR-CONTACT FIELD AND CARRIER DISTRIBUTIONS IN EXTRINSIC GERMANIUM PHOTOCONDUCTORS

被引：14

作者：

HAEGEL, NM ^{[1
]}

WHITE, AM ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

INFRARED PHYSICS | 1989年 / 29卷 / 05期

关键词：

D O I：

10.1016/0020-0891(89)90041-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：915 / 923

页数：9

共 12 条

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[8] SPECTROSCOPY OF THE SOLID-STATE ANALOGS OF THE HYDROGEN-ATOM - DONORS AND ACCEPTORS IN SEMICONDUCTORS [J].

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