THEORY OF HIGH-LOW JUNCTION CONTACTS AT LOW-TEMPERATURE WITH APPLICATION TO EXTRINSIC SILICON DETECTORS

被引：6

作者：

LUDMAN, JE ^{[1
]}

SILVERMAN, J ^{[1
]}

机构：

[1] ROME AIR DEV CTR,DEPUTY ELECTR TECHNOL,HANSCOM AFB,MA 01731

来源：

INFRARED PHYSICS | 1977年 / 17卷 / 03期

关键词：

D O I：

10.1016/0020-0891(77)90010-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：177 / 184

页数：8

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[2]

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[3]

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[4]

LAMPERT MA, 1970, SEMICONDUCTORS SEMIM, V6

[5]

Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[6] SWEEPOUT AND DIELECTRIC RELAXATION IN COMPENSATED EXTRINSIC PHOTOCONDUCTORS [J].

MILTON, AF ;

BLOUKE, MM .

PHYSICAL REVIEW B, 1971, 3 (12) :4312-&

[7] RECOMBINATION OF ELECTRONS AT IONIZED DONORS IN SILICON AT LOW-TEMPERATURES [J].

NORTON, P ;

BRAGGINS, T ;

LEVINSTEIN, H .

PHYSICAL REVIEW LETTERS, 1973, 30 (11) :488-489

[8]

NORTON P, 1973, P IRIS SPECIALTY GRO, P529

[9]

Sze S. M., 1969, PHYSICS SEMICONDUCTO, P60

[10]

1976, SOURCE BOOK EXTRINSI

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