RECOMBINATION OF ELECTRONS AT IONIZED DONORS IN SILICON AT LOW-TEMPERATURES

被引：43

作者：

NORTON, P ^{[1
]}

BRAGGINS, T ^{[1
]}

LEVINSTEIN, H ^{[1
]}

机构：

[1] SYRACUSE UNIV, DEPT PHYS, SYRACUSE, NY 13210 USA

来源：

PHYSICAL REVIEW LETTERS | 1973年 / 30卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.30.488

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：488 / 489

页数：2

共 9 条

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[2] LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON [J].

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PHYSICAL REVIEW, 1967, 153 (03) :890-+

[3] ELECTRON CAPTURE BY NEUTRAL DONORS IN N-TYPE GERMANIUM AND SILICON [J].

BROWN, RA ;

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PHYSICS LETTERS A, 1970, A 32 (07) :513-&

[4] EFFECT OF IMPURITY CONDUCTION ON ELECTRON RECOMBINATION IN GERMANIUM AND SILICON AT LOW TEMPERATURES [J].

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[5]

BROWN RA, PRIVATE COMMUNICATIO

[6] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].

LAX, M .

PHYSICAL REVIEW, 1960, 119 (05) :1502-1523

[7]

LEVITT RS, 1961, J PHYS CHEM SOLIDS, V22, P269

[8] RECOMBINATION CROSS-SECTION FOR HOLES AT A SINGLY IONIZED COPPER IMPURITY IN GERMANIUM [J].

NORTON, P ;

LEVINSTEIN, H .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (02) :489-+

[9] THERMALIZATION TIME OF HOT PHOTOEXCITED HOLES IN P-TYPE GERMANIUM [J].

NORTON, P ;

LEVINSTEIN, H .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (02) :478-+

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