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OBSERVED TRAPPING PARAMETERS OF PHOTOEXCITED CARRIERS IN GERMANIUM AND SILICON

被引：3
作者：
BARKER, JR
HEARN, CJ
机构：
来源：
PHYSICS LETTERS A | 1968年 / A 26卷 / 04期
关键词：
D O I：
10.1016/0375-9601(68)90048-0
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：148 / &
相关论文
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[6]   PHOTOEXCITED ELECTRON CAPTURE BY IONIZED AND NEUTRAL SHALLOW IMPURITIES IN SOLICON AT LIQUID-HELIUM TEMPERATURES [J].
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[8]   HOT CARRIERS IN GERMANIUM [J].
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