PHOTOEXCITED ELECTRON CAPTURE BY IONIZED AND NEUTRAL SHALLOW IMPURITIES IN SOLICON AT LIQUID-HELIUM TEMPERATURES

被引：31

作者：

LOEWENSTEIN, M

HONIG, A

机构：

来源：

PHYSICAL REVIEW | 1966年 / 144卷 / 02期

关键词：

D O I：

10.1103/PhysRev.144.781

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：781 / +

页数：1

共 16 条

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[3] SHALLOW IMPURITY TRAPS AND ELECTRON TRANSFER DYNAMICS IN N-TYPE SILICON AT LIQUID HELIUM TEMPERATURES
HONIG, A
LEVITT, R
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[4] HONIG A, 1961, 1960 P INT C SEM PHY, P610
[5] HONIG A, 1965, 1964 P INT C PHYS SE
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[10] POKROVSKII YE, 1964, FIZ TVERD TELA, V6, P19