SWEEPOUT AND DIELECTRIC RELAXATION IN COMPENSATED EXTRINSIC PHOTOCONDUCTORS

[1] BENSIRA MY, 1959, PHYS REV, V115, P554

[2] Besfamil'naya V. A., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P21

[3] BESFAMILNAYA VA, 1969, SOV PHYS SEMICOND+, V3, P15

[4] Kaufman S. A., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P571

[5] KAUFMAN SA, 1969, SOV PHYS SEMICOND+, V3, P485

[6] LAMPERT M, PRIVATE COMMUNICATIO

[7] TRANSIENT BEHAVIOR OF THE OHMIC CONTACT [J]. PHYSICAL REVIEW, 1959, 113 (05): : 1236 - 1239

[8] PHOTOEXCITED ELECTRON CAPTURE BY IONIZED AND NEUTRAL SHALLOW IMPURITIES IN SOLICON AT LIQUID-HELIUM TEMPERATURES [J]. PHYSICAL REVIEW, 1966, 144 (02): : 781 - +

[9] FREQUENCY DEPENDENCE OF DEBYE LENGTH IN COMPENSATED EXTRINSIC PHOTOCONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (07) : 285 - &

[10] CARRIER GENERATION AND RECOMBINATION PROCESSES IN COPPER-DOPED GERMANIUM PHOTOCONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1753 - &

[1] BENSIRA MY, 1959, PHYS REV, V115, P554

[2] Besfamil'naya V. A., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P21

[3] BESFAMILNAYA VA, 1969, SOV PHYS SEMICOND+, V3, P15

[4] Kaufman S. A., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P571

[5] KAUFMAN SA, 1969, SOV PHYS SEMICOND+, V3, P485

[6] LAMPERT M, PRIVATE COMMUNICATIO

[7] TRANSIENT BEHAVIOR OF THE OHMIC CONTACT [J]. PHYSICAL REVIEW, 1959, 113 (05): : 1236 - 1239

[8] PHOTOEXCITED ELECTRON CAPTURE BY IONIZED AND NEUTRAL SHALLOW IMPURITIES IN SOLICON AT LIQUID-HELIUM TEMPERATURES [J]. PHYSICAL REVIEW, 1966, 144 (02): : 781 - +

[9] FREQUENCY DEPENDENCE OF DEBYE LENGTH IN COMPENSATED EXTRINSIC PHOTOCONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (07) : 285 - &

[10] CARRIER GENERATION AND RECOMBINATION PROCESSES IN COPPER-DOPED GERMANIUM PHOTOCONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1753 - &