Sub-10-nm-scale lithography using p-chloromethyl-methoxy-calix[4]arene resist

被引：67

作者：

Ishida, M

Fujita, JI

Ogura, T

Ochiai, Y

Ohshima, E

Momoda, J

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan

[3] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 6B期

关键词：

electron beam; lithography; resist; calixarene; high resolution;

D O I：

10.1143/JJAP.42.3913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined the properties of p-chloromethyl-methoxy-calix[4]arene (CMC4) as a high-resolution negative-tone resist for electron-beam (EB) lithography. CMC4's highest resolution was less than 8 nm, and of the calixarene resists studied so far, it has the highest solubility in Cl-free solvents. Comparison with the p-chloromethyl-methoxy-calix[6]arene (CMC6) resist revealed that the CMC4 resist's low molecular weight and low crystallinity were the origin of its high resolution and high solubility.

引用

页码：3913 / 3916

页数：4

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