Calixarene electron beam resist for nano-lithography

被引：41

作者：

Fujita, J ^{[1
]}

Ohnishi, Y ^{[1
]}

Manako, S ^{[1
]}

Ochiai, Y ^{[1
]}

Nomura, E ^{[1
]}

Sakamoto, T ^{[1
]}

Matsui, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 12B期

关键词：

electron-beam lithography; resist; calixarene; nanolithography;

D O I：

10.1143/JJAP.36.7769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 mu C/cm(2) to 7 mC/cm(2). High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our results suggest that the resolution Limit of calixarene resists is dominated by a development process such as adhesion to a substrate rather than by the EB profile. Calixarene resists are resistant to etching by halide plasma. We also demonstrated nanoscale devices processed by using calixarene resists. Calixarene resists are promising materials for nanofabrication.

引用

页码：7769 / 7772

页数：4

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