NANOLITHOGRAPHY USING A CHEMICALLY AMPLIFIED NEGATIVE RESIST BY ELECTRON-BEAM EXPOSURE

被引：13

作者：

MANAKO, S ^{[1
]}

OCHIAI, Y ^{[1
]}

FUJITA, JI ^{[1
]}

SAMOTO, N ^{[1
]}

MATSUI, S ^{[1
]}

机构：

[1] NEC CORP LTD,KANSAI ELECTR RES LABS,OTSU,SHIGA 520,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

ELECTRON BEAM; LITHOGRAPHY; CHEMICALLY AMPLIFIED RESIST; ADHESION; ACID DIFFUSION; POSTEXPOSURE BAKE;

D O I：

10.1143/JJAP.33.6993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the resolution limit for dot patterns using a chemically amplified negative resist by the nanometer electron beam lithography system. It is confirmed that the substrates baked at 270 degrees C after HMDS coating are suitable for fine resist dot patterning. In addition, the post exposure bake (PEB) dependencies of sensitivity and resolution are investigated. As a result, 20-nm-diameter dot resist patterns with a 30 nm height, and 35-nm-diameter dot resist patterns with a 50 nm height are fabricated on Si substrates.

引用

页码：6993 / 6997

页数：5

共 6 条

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