Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

被引：384

作者：

Bajoni, Daniele ^{[1
]}

Senellart, Pascale ^{[1
]}

Wertz, Esther ^{[1
]}

Sagnes, Isabelle ^{[1
]}

Miard, Audrey ^{[1
]}

Lemaitre, Aristide ^{[1
]}

Bloch, Jacqueline ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.100.047401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

引用

页数：4

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