Resist materials for 157-nm lithography

被引：38

作者：

Toriumi, M ^{[1
]}

Ishikawa, S ^{[1
]}

Miyoshi, S ^{[1
]}

Naito, T ^{[1
]}

Yamazaki, T ^{[1
]}

Watanabe, M ^{[1
]}

Itani, T ^{[1
]}

机构：

[1] Selete, Adv Technol Res Dept, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2 | 2001年 / 4345卷

关键词：

157-nm lithography; fluoropolymer; photoresist; aqueous base solubility; chemical amplification;

D O I：

10.1117/12.436868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fluoropolymers are key materials for single layer resists of 157-nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157-nm photoresist. Many fluoropolymers showed high optical transparencies, with absorption coefficients of 0.01 mum(-1) to 2 mum(-1) at 157 nm, and dry-etching resistance comparable to an ArF resist, and non-swelling solubility in the standard developer. Positive-tone resists were formulated using fluoropolymers that fulfill practical resist requirements. They showed good sensitivities, from I mJ/cm(2) to 10 mJ/cm(2), and contrast in the sensitivity curves. They were able to be patterned using a F-2 laser microstepper.

引用

页码：371 / 378

页数：8

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