High performance ZnO nanowire field effect transistor

被引：5

作者：

Cha, SN ^{[1
]}

Jang, JE ^{[1
]}

Choi, Y ^{[1
]}

Ho, GW ^{[1
]}

Kang, DJ ^{[1
]}

Hasko, DG ^{[1
]}

Welland, ME ^{[1
]}

Amaratunga, GAJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nano scale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 mu S, a mobility of 450 cm(2)/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 10(6).

引用

页码：217 / 220

页数：4

共 23 条

[1] PHOTO-VOLTAIC PROPERTIES OF ZNO-CDTE HETEROJUNCTIONS PREPARED BY SPRAY PYROLYSIS
ARANOVICH, JA
GOLMAYO, D
FAHRENBRUCH, AL
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4260 - 4268
[2] Carbon nanotube based bearing for rotational motions
Bourlon, B
Glattli, DC
Miko, C
Forró, L
Bachtold, A
[J]. NANO LETTERS, 2004, 4 (04) : 709 - 712
[3] CHA SN, 2005, IN PRESS APPL PHYS L, V86
[4] CHEN J, IEDM 2004, P695
[5] Low-friction nanoscale linear bearing realized from multiwall carbon nanotubes
Cumings, J
Zettl, A
[J]. SCIENCE, 2000, 289 (5479) : 602 - 604
[6] Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r-plane sapphire
Emanetoglu, NW
Zhu, J
Chen, Y
Zhong, J
Chen, YM
Lu, YC
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3702 - 3704
[7] ZnO nanowire field-effect transistor and oxygen sensing property
Fan, ZY
Wang, DW
Chang, PC
Tseng, WY
Lu, JG
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (24) : 5923 - 5925
[8] Rotational actuators based on carbon nanotubes
Fennimore, AM
Yuzvinsky, TD
Han, WQ
Fuhrer, MS
Cumings, J
Zettl, A
[J]. NATURE, 2003, 424 (6947) : 408 - 410
[9] Directed growth of ordered arrays of small-diameter ZnO nanowires
Greyson, EC
Babayan, Y
Odom, TW
[J]. ADVANCED MATERIALS, 2004, 16 (15) : 1348 - +
[10] Depletion-mode ZnO nanowire field-effect transistor
Heo, YW
Tien, LC
Kwon, Y
Norton, DP
Pearton, SJ
Kang, BS
Ren, F
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (12) : 2274 - 2276

← 1 2 3 →