Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy

被引：45

作者：

Meoded, T ^{[1
]}

Shikler, R ^{[1
]}

Fried, N ^{[1
]}

Rosenwaks, Y ^{[1
]}

机构：

[1] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Ramat Aviv, Israel

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 16期

关键词：

D O I：

10.1063/1.125039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the use of Kelvin force microscopy as a method for measuring very short minority carrier diffusion length in semiconductors. The method is based on measuring the surface photovoltage between the tip of an atomic force microscope and the surface of an illuminated semiconductor junction. The photogenerated carriers diffuse to the junction, and change the contact potential difference between the tip and the sample as a function of the distance from the junction edge. The diffusion length L is then obtained by fitting the measured contact potential difference using the minority carrier continuity equation. The method is applied to measurements of electron diffusion lengths in GaP epilayers. (C) 1999 American Institute of Physics. [S0003-6951(99)03742-0].

引用

页码：2435 / 2437

页数：3

共 13 条

[1] PHOTO-VOLTAGE SATURATION AND RECOMBINATION AT AL-GAAS INTERFACIAL LAYERS [J].

BRILLSON, LJ ;

KRUGER, DW .

SURFACE SCIENCE, 1981, 102 (2-3) :518-526

[2] ON THE ANALYSIS OF DIFFUSION LENGTH MEASUREMENTS BY SEM [J].

DONOLATO, C .

SOLID-STATE ELECTRONICS, 1982, 25 (11) :1077-1081

[3] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2550-&

[4] Local probe techniques for luminescence studies of low-dimensional semiconductor structures [J].

Gustafsson, A ;

Pistol, ME ;

Montelius, L ;

Samuelson, L .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :1715-1775

[5] MINORITY-CARRIER DIFFUSION LENGTH AND EDGE SURFACE-RECOMBINATION VELOCITY IN INP [J].

HAKIMZADEH, R ;

BAILEY, SG .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :1118-1123

[6]

JHONSON EO, 1957, PHYS REV B, V111, P153

[7]

NONENMACHER M, 1991, APPL PHYS LETT, V58, P2921

[8] METAL REACTIVITY EFFECTS ON THE SURFACE RECOMBINATION VELOCITY AT INP INTERFACES [J].

ROSENWAKS, Y ;

SHAPIRA, Y ;

HUPPERT, D .

APPLIED PHYSICS LETTERS, 1990, 57 (24) :2552-2554

[9] Potential imaging of operating light-emitting devices using Kelvin force microscopy [J].

Shikler, R ;

Meoded, T ;

Fried, N ;

Rosenwaks, Y .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2972-2974

[10]

SHIKLER R, UNPUB

← 1 2 →