ON THE ANALYSIS OF DIFFUSION LENGTH MEASUREMENTS BY SEM

被引：99

作者：

DONOLATO, C

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 11期

关键词：

D O I：

10.1016/0038-1101(82)90144-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1077 / 1081

页数：5

共 20 条

[1]

ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P299

[2] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].

BERZ, F ;

KUIKEN, HK .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445

[3]

BRESSE JF, 1972, 5TH P ANN SEM S, P105

[4] ELECTRON PENETRATION AND ENERGY-TRANSFER IN SOLID TARGETS [J].

FITTING, HJ ;

GLAEFEKE, H ;

WILD, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :185-190

[5] INTERPRETATION OF SCANNING ELECTRON-MICROSCOPE MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

FLAT, A ;

MILNES, AG .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 44 (06) :629-639

[6] ANALYSIS OF ELECTRON-BEAM INDUCED CURRENT CONSIDERING SAMPLE DIMENSIONS - MEASUREMENT OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY [J].

FUYUKI, T ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :745-751

[7] ANALYSIS OF EBIC CONSIDERING THE GENERATION DISTRIBUTION OF MINORITY-CARRIERS [J].

FUYUKI, T ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (08) :1503-1510

[8] THE INFLUENCE OF THE GENERATION VOLUME OF MINORITY-CARRIERS ON EBIC [J].

FUYUKI, T ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (06) :1093-1100

[9]

Gradshteyn I. S., 2014, TABLE INTEGRALS SERI

[10] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].

HACKETT, WH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&

← 1 2 →