INTERPRETATION OF SCANNING ELECTRON-MICROSCOPE MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS

被引：10

作者：

FLAT, A

MILNES, AG

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1978年 / 44卷 / 06期

关键词：

D O I：

10.1080/00207217808900867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：629 / 639

页数：11

共 10 条

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[2]

BRESSE JF, 1971, 25TH P ANN M EMAG

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[4] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC .

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KYSER, DF ;

WITTRY, DB .

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[6] ELECTRON-BEAM PENETRATION IN GAAS [J].

MARTINELLI, RU ;

WANG, CC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3350-3351

[7] HOLE DIFFUSION LENGTH IN HIGH-PURITY GAAS [J].

RYAN, RD ;

EBERHARDT, JE .

SOLID-STATE ELECTRONICS, 1972, 15 (08) :865-+

[8]

SEKELA AM, 1974, GALLIUM ARSENIDE REL, P245

[9]

VANOPDORP C, 1977, PHILIPS RES REP, V32, P192

[10] INJECTED CURRENT CARRIER TRANSPORT IN A SEMI-INFINITE SEMICONDUCTOR AND THE DETERMINATION OF LIFETIMES AND SURFACE RECOMBINATION VELOCITIES [J].

VANROOSBROECK, W .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (04) :380-391

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