HOLE DIFFUSION LENGTH IN HIGH-PURITY GAAS

[1] RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 167 - &

[2] EVALUATION OF EPITAXIAL N-GAAS FOR NUCLEAR RADIATION DETECTION [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 94 (03): : 463 - +

[3] DIRECT MEASUREMENT OF DIFFUSION LENGTH IN GAAS BY ALPHA PARTICLES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2570 - &

[4] Hall R. N., 1960, P IEE, V106, P923

[5] HIGH PURITY GAAS BY LIQUID PHASE EPITAXY [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (20) : 1463 - &

[6] MEASUREMENT OF LIFETIME OF MINORITY CARRIERS IN SEMICONDUCTORS WITH A SCANNING ELECTRON MICROSCOPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) : 316 - +

[7] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &

[8] GALLIUM-ARSENIDE SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1972, 98 (01): : 179 - +

[9] AVALANCHE-TYPE GAAS RADIATION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 95 (02): : 365 - +

[10] DIRECT RECOMBINATION IN GAAS AND SOME CONSEQUENCES IN TRANSISTOR DESIGN [J]. SOLID-STATE ELECTRONICS, 1961, 2 (04) : 195 - 201

[1] RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 167 - &

[2] EVALUATION OF EPITAXIAL N-GAAS FOR NUCLEAR RADIATION DETECTION [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 94 (03): : 463 - +

[3] DIRECT MEASUREMENT OF DIFFUSION LENGTH IN GAAS BY ALPHA PARTICLES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2570 - &

[4] Hall R. N., 1960, P IEE, V106, P923

[5] HIGH PURITY GAAS BY LIQUID PHASE EPITAXY [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (20) : 1463 - &

[6] MEASUREMENT OF LIFETIME OF MINORITY CARRIERS IN SEMICONDUCTORS WITH A SCANNING ELECTRON MICROSCOPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) : 316 - +

[7] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &

[8] GALLIUM-ARSENIDE SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1972, 98 (01): : 179 - +

[9] AVALANCHE-TYPE GAAS RADIATION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 95 (02): : 365 - +

[10] DIRECT RECOMBINATION IN GAAS AND SOME CONSEQUENCES IN TRANSISTOR DESIGN [J]. SOLID-STATE ELECTRONICS, 1961, 2 (04) : 195 - 201