MEASUREMENT OF LIFETIME OF MINORITY CARRIERS IN SEMICONDUCTORS WITH A SCANNING ELECTRON MICROSCOPE

被引：49

作者：

HIGUCHI, H

TAMURA, H

机构：

来源：

关键词：

D O I：

10.1143/JJAP.4.316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：316 / +

页数：1

共 3 条

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[2] THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J].

GOUCHER, FS ;

PEARSON, GL ;

SPARKS, M ;

TEAL, GK ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (04) :637-638

[3] AN IMPROVED SCANNING ELECTRON MICROSCOPE FOR OPAQUE SPECIMENS [J].

MCMULLAN, D ;

THEWLIS, J ;

AGAR, AW ;

GABOR, D ;

HAINE, ME ;

LUBSZYNSKI, HG ;

FEINBERG, R ;

MCMULLAN, D .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1953, 100 (75) :245-259