RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE

[1] RELAXATION OSCILLATIONS DUE TO IMPACT IONISATION IN EPITAXIAL SHEET-TYPE GUNN OSCILLATORS [J]. ELECTRONICS LETTERS, 1969, 5 (08) : 160 - +

[2] CARBALLES JC, 1968, 2 P INT S GALL ARS D, P28

[3] HEEKS JS, 1967, T IEEE, VED14, P512

[4] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &

[5] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P141

[6] MUNCH WV, 1969, TECHNOLOGIE GALLIUMA, P5

[7] MUNCH WV, 1969, TECHNOLOGIE GALLIUMA, P12

[8] DIFFUSION AND DETECTION OF OXYGEN IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (24) : 1771 - &

[9] Shur M. S., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1465

[10] RECOMBINATION PROCESSES FOLLOWING IMPACT IONIZATION BY HIGH-FIELD DOMAINS IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4589 - +

[1] RELAXATION OSCILLATIONS DUE TO IMPACT IONISATION IN EPITAXIAL SHEET-TYPE GUNN OSCILLATORS [J]. ELECTRONICS LETTERS, 1969, 5 (08) : 160 - +

[2] CARBALLES JC, 1968, 2 P INT S GALL ARS D, P28

[3] HEEKS JS, 1967, T IEEE, VED14, P512

[4] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &

[5] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P141

[6] MUNCH WV, 1969, TECHNOLOGIE GALLIUMA, P5

[7] MUNCH WV, 1969, TECHNOLOGIE GALLIUMA, P12

[8] DIFFUSION AND DETECTION OF OXYGEN IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (24) : 1771 - &

[9] Shur M. S., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1465

[10] RECOMBINATION PROCESSES FOLLOWING IMPACT IONIZATION BY HIGH-FIELD DOMAINS IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4589 - +