RECOMBINATION PROCESSES FOLLOWING IMPACT IONIZATION BY HIGH-FIELD DOMAINS IN GALLIUM ARSENIDE

被引：60

作者：

SOUTHGATE, PD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 12期

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D O I：

10.1063/1.1709190

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：4589 / +

页数：1

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共 14 条

[1] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS
BUTCHER, PN
FAWCETT, W
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &
[2] INFRARED RADIATION FROM BULK GAAS - (DC PULSE EXCITATION - 9000 A - E)
CHANG, KKN
LIU, SG
PRAGER, HJ
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (08) : 196 - &
[3] CHYNOWETH AG, 1960, PROGRESS SEMICONDUCT, V4, P95
[4] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[5] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES
HEEKS, JS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 68 - +
[6] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[7] EFFECTIVE IONIZATION RATE FOR HOT CARRIERS IN GAAS
KRESSEL, H
KUPSKY, G
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) : 535 - &
[8] INFRARED AND MICROWAVE RADIATIONS ASSOCIATED WITH A CURRENT-CONTROLLED INSTABILITY IN GAAS
LIU, SG
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (02) : 79 - +
[9] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
CHYNOWETH, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 4 - +
[10] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS
RIDLEY, BK
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530): : 954 - &