EFFECTIVE IONIZATION RATE FOR HOT CARRIERS IN GAAS

被引:29
作者
KRESSEL, H
KUPSKY, G
机构
关键词
D O I
10.1080/00207216608937887
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:535 / &
相关论文
共 15 条
[1]  
ALADINSK.VK, 1965, FIZ TVERD TELA+, V7, P1460
[2]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[3]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].
GOETZBERGER, A ;
SCARLETT, RM ;
HAITZ, RH ;
MCDONALD, B .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+
[4]   BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS [J].
KRESSEL, H ;
BLICHER, A .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2495-&
[5]  
KRESSEL H, 1962, P IRE, V50, P2493
[6]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[7]   CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS [J].
LOGAN, RA ;
WHITE, HG .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3945-&
[8]   AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J].
LOGAN, RA ;
CHYNOWETH, AG ;
COHEN, BG .
PHYSICAL REVIEW, 1962, 128 (06) :2518-&
[9]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[10]  
Shields J., 1959, J ELECTRON CONTR, V6, P130, DOI 10.1080/00207215908937136