ANALYSIS OF EBIC CONSIDERING THE GENERATION DISTRIBUTION OF MINORITY-CARRIERS

[1] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1113

[2] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 437 - 445

[3] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831

[4] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[5] THE INFLUENCE OF THE GENERATION VOLUME OF MINORITY-CARRIERS ON EBIC [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (06) : 1093 - 1100

[6] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS BY DIFFRACTION FROM PICOSECOND TRANSIENT FREE-CARRIER GRATINGS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 536 - 539

[7] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 537 - 539

[8] JASTRZEBSKI L, 1977, J APPL PHYS, V48, P1730, DOI 10.1063/1.323814

[9] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &

[10] MAKAROV VV, 1975, SOV PHYS SEMICOND+, V9, P722

[1] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1113

[2] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 437 - 445

[3] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831

[4] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[5] THE INFLUENCE OF THE GENERATION VOLUME OF MINORITY-CARRIERS ON EBIC [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (06) : 1093 - 1100

[6] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS BY DIFFRACTION FROM PICOSECOND TRANSIENT FREE-CARRIER GRATINGS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 536 - 539

[7] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 537 - 539

[8] JASTRZEBSKI L, 1977, J APPL PHYS, V48, P1730, DOI 10.1063/1.323814

[9] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &

[10] MAKAROV VV, 1975, SOV PHYS SEMICOND+, V9, P722