Interface engineering for molecular alignment and device performance of quaterrylene thin films

被引：17

作者：

Hayakawa, Ryoma ^{[1
]}

Petit, Matthieu ^{[1
]}

Chikyow, Toyohiro ^{[1
]}

Wakayama, Yutaka ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期

关键词：

D O I：

10.1063/1.2998404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the impact of interface modification by an octadecyltrichlorosilane self-assembled monolayer (OTS-SAM) on growth mode and transistor performance of quaterrylene thin films. Interface modification by OTS-SAM contributed effectively to stress-free film growth and highly molecular ordering, particularly in the initial layers, dramatically improving transistor performance. We found that the structural features in a few layers were key factors for determining the overall thin film growth mode and ameliorating carrier transport in organic field-effect transistors (OFETs). These results clearly demonstrated the effectiveness of interface engineering in the OFETs. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998404]

引用

页数：3

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