Surface chemistry during porous-silicon formation in dilute fluoride electrolytes

被引:28
作者
Belaïdi, A [1 ]
Safi, M
Ozanam, F
Chazalviel, JN
Gorochov, O
机构
[1] CNRS, Phys Solides Lab, F-92195 Meudon, France
[2] Univ Ibn Tofail, Fac Sci, Dept Chem, Kenitra 14000, Morocco
[3] Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France
关键词
D O I
10.1149/1.1391988
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In contrast to previous belief, we show that oxide is present at the silicon/dilute-fluoride electrolyte interface even near the onset of anodic current, which corresponds to the regime of porous-silicon formation. This point is supported by the observation of a transient anodic current when the potential is maintained in this region until a steady-state current is reached, then stepped to a value near that of the open-circuit potential. In situ infrared investigations confirm the presence of a submonolayer oxide film. Upon polarizing the interface, the electrochemical current and the surface concentrations of oxide and hydrogen exhibit slow relaxations. These transient features are accounted for in a simple kinetic model, which assumes two parallel dissolution pathways and a slow, potential-dependent relaxation of the electrochemically active surface area. In this framework, the transition to the electropolishing regime is found to correspond to unit coverage of the electrochemically active surface by the oxide. (C) 1999 The Electrochemical Society. S0013-4651(98)10-041-1. All rights reserved.
引用
收藏
页码:2659 / 2664
页数:6
相关论文
共 22 条
[1]  
[Anonymous], POROUS SILICON SCI T
[2]   Silicon surface states and subsurface hydrogen [J].
Belaidi, A ;
Chazalviel, JN ;
Ozanam, F ;
Gorochov, O ;
Chari, A ;
Fotouhi, B ;
Etman, M .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1998, 444 (01) :55-60
[3]   ANODIC-OXIDATION OF POROUS SILICON LAYERS FORMED ON LIGHTLY P-DOPED SUBSTRATES [J].
BSIESY, A ;
GASPARD, F ;
HERINO, R ;
LIGEON, M ;
MULLER, F ;
OBERLIN, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3450-3456
[4]   INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
BURROWS, VA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109
[5]   In situ infrared study of the oscillating anodic dissolution of silicon in fluoride electrolytes [J].
Chazalviel, JN ;
da Fonseca, C ;
Ozanam, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (03) :964-973
[6]   In situ infrared characterisation of the interfacial oxide during the anodic dissolution of a silicon electrode in fluoride electrolytes [J].
daFonseca, C ;
Ozanam, F ;
Chazalviel, JN .
SURFACE SCIENCE, 1996, 365 (01) :1-14
[7]   SURFACE ELECTRONIC-PROPERTIES OF ELECTROLYTICALLY HYDROGEN-TERMINATED SI(111) [J].
DITTRICH, T ;
ANGERMANN, H ;
FLIETNER, H ;
BITZER, T ;
LEWERENZ, HJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (12) :3595-3599
[8]   SIO2-SI N-TYPE INTERFACE INVESTIGATION WITH ELECTROCHEMICAL METHOD [J].
GERSHINSKII, AE ;
MIRONOVA, LV ;
CHEREPOV, EI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01) :369-373
[9]  
HALIMAOUI A, 1993, NATO ADV SCI INST SE, V244, P11
[10]   ANODIC OXIDES ON SILICON [J].
LEWERENZ, HJ .
ELECTROCHIMICA ACTA, 1992, 37 (05) :847-864