Laser synthesis of uniform silicon single nanodots

被引：57

作者：

Seto, T ^{[1
]}

Kawakami, Y ^{[1
]}

Suzuki, N ^{[1
]}

Hirasawa, M ^{[1
]}

Aya, N ^{[1
]}

机构：

[1] AIST, Res Ctr Adv Mfg Nanoscale Sci & Engn, Tsukuba, Ibaraki 3058564, Japan

来源：

NANO LETTERS | 2001年 / 1卷 / 06期

关键词：

D O I：

10.1021/nl015530n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Uniform silicon single nanodots were synthesized by laser ablation with a differential mobility analyzer (DMA) technique. The Si nanoparticles generated by laser irradiation of a silicon target were actively classified by a DMA and were impacted on the solid surface by a "nanoparticle beam". By measuring the current of the beam, we determined the size distribution of generated particles in situ. From transmission electron microscope (TEM) observation of deposited dots, it was found that they were well-isolated and uniform in size. High-resolution TEM images indicated that they were single crystals with a diameter of 10, 7, and 5 nm. However, the particles less than 4 nm seemed to have no crystallinity (amorphous).

引用

页码：315 / 318

页数：4

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