Formation of ordered nanoscale semiconductor dots by ion sputtering

被引：757

作者：

Facsko, S

Dekorsy, T

Koerdt, C

Trappe, C

Kurz, H

Vogt, A

Hartnagel, HL

机构：

[1] Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany

[2] TU Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany

来源：

SCIENCE | 1999年 / 285卷 / 5433期

关键词：

D O I：

10.1126/science.285.5433.1551

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal Lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

引用

页码：1551 / 1553

页数：3

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