Roughening and ripple instabilities on ion-bombarded Si

被引:423
作者
Carter, G
Vishnyakov, V
机构
[1] Department of Electronic and Electrical Engineering, University of Salford
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 24期
关键词
D O I
10.1103/PhysRevB.54.17647
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Experimental studies of 10-40-keV Xe+ ion bombardment of Si at polar incidence angles between 0 degrees and 45 degrees to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45 degrees incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.
引用
收藏
页码:17647 / 17653
页数:7
相关论文
共 36 条
  • [1] DEPTH RESOLUTION OF SPUTTER PROFILING
    ANDERSEN, HH
    [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
  • [2] ATOMIC DISPLACEMENTS AND ATOMIC MOTION INDUCED BY ELECTRONIC EXCITATION IN HEAVY-ION-IRRADIATED AMORPHOUS METALLIC ALLOYS
    AUDOUARD, A
    BALANZAT, E
    JOUSSET, JC
    LESUEUR, D
    THOME, L
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (08) : 995 - 1018
  • [3] THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT
    BRADLEY, RM
    HARPER, JME
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2390 - 2395
  • [4] THE PRODUCTION OF REPETITIVE SURFACE-FEATURES BY OBLIQUE-INCIDENCE ION-BOMBARDMENT
    CARTER, G
    NOBES, MJ
    KATARDJIEV, IV
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1993, 68 (02): : 231 - 236
  • [5] SPUTTER POLISHING OF SURFACES
    CARTER, G
    NOBES, MJ
    KATARDJIEV, IV
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 66 (03): : 419 - 425
  • [6] A 2ND-ORDER EROSION SLOWNESS THEORY OF THE DEVELOPMENT OF SURFACE-TOPOGRAPHY BY ION-INDUCED SPUTTERING
    CARTER, G
    NOBES, MJ
    WEBB, RP
    [J]. JOURNAL OF MATERIALS SCIENCE, 1981, 16 (08) : 2091 - 2102
  • [7] THE EVOLUTION OF ATOMIC SCALE TOPOGRAPHY BY SPUTTERING EROSION
    CARTER, G
    NOBES, MJ
    STOERE, H
    KATARDJIEV, IV
    [J]. SURFACE AND INTERFACE ANALYSIS, 1993, 20 (01) : 90 - 94
  • [8] RIPPLE PRODUCTION INDUCED BY OBLIQUE-INCIDENCE ION-BOMBARDMENT OF SI
    CARTER, G
    NOBES, MJ
    CAVE, C
    ALQADI, N
    [J]. VACUUM, 1994, 45 (01) : 71 - 77
  • [9] THE EFFECTS OF ION SPECIES AND TARGET TEMPERATURE ON TOPOGRAPHY DEVELOPMENT ON ION-BOMBARDED SI
    CARTER, G
    VISHNYAKOV, V
    MARTYNENKO, YV
    NOBES, MJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3559 - 3565
  • [10] CARTER G, 1976, P 8 INT SUMM SCH PHY, V239, P281