RIPPLE PRODUCTION INDUCED BY OBLIQUE-INCIDENCE ION-BOMBARDMENT OF SI

被引：18

作者：

CARTER, G

NOBES, MJ

CAVE, C

ALQADI, N

机构：

[1] Department of Electronic and Electrical Engineering, University of Salford, Salford

来源：

VACUUM | 1994年 / 45卷 / 01期

关键词：

D O I：

10.1016/0042-207X(94)90345-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The initiation and evolution of individual surface topographic features which extend, with increasing ion fluence, to produce terraced facet structures with ripple-like appearance ha ve been investigated during 40 keV Ar+, O+ and Cl+ ion bombardment of Si under oblique incidence conditions. The results suggest that topography is initiated by local surface buckling which derives from preferential forward momentum imparted to recoil atoms in the near-surface region.

引用

页码：71 / 77

页数：7

共 22 条

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