SURFACE-MORPHOLOGY OF SI(100), GAAS(100) AND INP(100) FOLLOWING O-2+ AND CS+ ION-BOMBARDMENT

被引：56

作者：

DUNCAN, S

SMITH, R

SYKES, DE

WALLS, JM

机构：

来源：

VACUUM | 1984年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/0042-207X(84)90117-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：145 / 151

页数：7

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