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SURFACE-TOPOGRAPHY OF ELECTRONIC MATERIALS FOLLOWING OXYGEN AND CESIUM ION-BOMBARDMENT

被引：16
作者：
DUNCAN, S
SMITH, R
SYKES, DE
WALLS, JM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期
关键词：
D O I：
10.1116/1.572191
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：621 / 622
页数：2
相关论文
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