Multiple-gated submicron vertical tunnelling structures

被引：34

作者：

Austing, DG

Honda, T

Tarucha, S

机构：

[1] NTT Basic Research Laboratories, Morinosato, Atsugi, Kanagawa 243-01

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 05期

关键词：

D O I：

10.1088/0268-1242/12/5/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose and demonstrate a new hybrid technology for fabricating submicron vertical resonant tunnelling structures with separate gates which has the potential to allow single-electron charging of, and single-electron tunnelling through, quantum dot structures containing just a 'few' electrons to be investigated in new ways.

引用

页码：631 / 636

页数：6

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