Electron Auger processes in mid-infrared InAsSb/InGaAs heterostructures

被引：26

作者：

Hjalmarson, HP

Kurtz, SR

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.117091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the effects of strain and quantum confinement, Auger rates are calculated for an n-type strained InAs0.9Sb0.1/In0.87Ga0.13As mid-infrared laser structure as a function of temperature. Compressive strain in the quantum wells reduces the mass of the holes which leads to a reduction in the Auger rate compared with an unstrained quantum well. The rate reduction is explained in terms of a qualitative analysis of the role of strain. The rate includes contributions from inter-subband Auger transitions which are found to dominate the rate at low temperature.

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页码：949 / 951

页数：3

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