Measurement of contact potential of GaAs pn junctions by Kelvin probe force microscopy

被引：19

作者：

Mizutani, T ^{[1
]}

Usunami, T ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 08期

关键词：

Kelvin probe force microscopy; cleaved surface; GaAs pn junction; contact potential;

D O I：

10.1143/JJAP.38.4893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contact potential of GaAs pn junctions was measured by Kelvin probe force microscopy (KFM). The contact potential profile of the pn junctions was not clear in the case of no illumination. When the sample was illuminated with a microscope light, the potential profile reflecting pn junctions became clear. The observed surface potential was explained by taking the surface band bending due to surface states into account.

引用

页码：4893 / 4894

页数：2

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